As-deposited ferroelectric HZO on a III–V semiconductor

نویسندگان

چکیده

By electrical characterization of thin films deposited by atomic layer deposition, Hf x Zr 1−x O 2 (HZO) is shown to be ferroelectric as-deposited, i.e., without any annealing step, using a thermal budget 300 °C. fabricating laminated HZO rather than the traditional solid-solution HZO, remanent polarization P r = 11 μC/cm and endurance exceeding 10 6 are obtained. Films grown on thermally reactive InAs semiconductor substrates showed capacitance–voltage modulation hysteresis, which varied depending interfacial oxide construction. Additionally, trade-off between higher lower gate leakage was found when comparing different laminate structures deposition temperatures. Scaling thickness oxides revealed that remain at 6.5 nm with an increased breakdown field for thinner devices.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A lead-halide perovskite molecular ferroelectric semiconductor

Inorganic semiconductor ferroelectrics such as BiFeO3 have shown great potential in photovoltaic and other applications. Currently, semiconducting properties and the corresponding application in optoelectronic devices of hybrid organo-plumbate or stannate are a hot topic of academic research; more and more of such hybrids have been synthesized. Structurally, these hybrids are suitable for explo...

متن کامل

Electric control of spin injection into a ferroelectric semiconductor.

Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due to the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle the spin polarization of carriers injected into a semiconductor using ferroelectric polarization as a control parameter. Using first-principles density-fu...

متن کامل

Domain control of carrier density at a semiconductor-ferroelectric interface

Control of charge carrier distribution in a gated channel via a dielectric layer is currently the state of the art in the design of integrated circuits such as field effect transistors. Replacing linear dielectrics with ferroelectrics would ultimately lead to more energy efficient devices as well as the added advantage of the memory function of the gate. Here, we report that the channel-off/cha...

متن کامل

Nano- TiO2/Nd Deposited on -Fe2O3 as a Magnetically Separable Photocatalyst

TiO2/Magnetit and TiO2/Nd/Magnetit were prepared and used for photocatalytic decomposition of the methylorange as a pollutant. TiO2 and TiO2/Nd were prepared by sol gel method and were characterized using XRD, FT IR and TEM. The prepared catalysts were deposited on magnetite surface to have a catalyst with magnetite core. So the catalyst can be separated easily from the waste solution by a magn...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2022

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0097462